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TC551001BPL-10L Datasheet SILICON GATE CMOS STATIC RAM

Manufacturer: Toshiba

Download the TC551001BPL-10L datasheet PDF. This datasheet also includes the TC551001BPL-70L variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TC551001BPL-70L-Toshiba.pdf) that lists specifications for multiple related part numbers.

General Description

The TC551 001 BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply.

Advanced circuit techniques provide both high speed and low power

Overview

TOSHIBA TC551001BPL/BFL/BFIL/BTRL-70L/85L/IOL SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC.

Key Features

  • with an operating current of 5mNMHz (typ. ) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2j. tA typically. The TC551 001 BPL has three control inputs. Chip enable inputs (CE1, CE2) allow for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC551 001 BPL is suitable for use in microprocessor systems where high speed, low powe.

More Datasheets from Toshiba

Part Number Description
TC551001BPL-10 SILICON GATE CMOS STATIC RAM
TC551001BPL-70 SILICON GATE CMOS STATIC RAM
TC551001BPL-70L SILICON GATE CMOS STATIC RAM
TC551001BPL-85 SILICON GATE CMOS STATIC RAM
TC551001BPL-85L SILICON GATE CMOS STATIC RAM
TC551001BFL-10 SILICON GATE CMOS STATIC RAM
TC551001BFL-10L SILICON GATE CMOS STATIC RAM
TC551001BFL-70 SILICON GATE CMOS STATIC RAM
TC551001BFL-70L SILICON GATE CMOS STATIC RAM
TC551001BFL-85 SILICON GATE CMOS STATIC RAM