TC51V8512AF-12 Datasheet SILICON GATE CMOS PSEUDO STATIC RAM

Manufacturer: Toshiba

TC51V8512AF-12 silicon gate cmos pseudo static ram by Toshiba - Datasheet Preview

Datasheet Details

Part number	TC51V8512AF-12
Manufacturer	Toshiba
File Size	301.13 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC51V8512AF-12 Datasheet

General Description

The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage.

The TC51 V8512AF operates from a single 3.0V power supply.

Overview

rOSHIBA SILICON GATE CMOS TC51V8512AF/ AFT/ A1R-12/15 PRELIMINARY 524,288 WORD x 8 BIT CMOS PSEUDO STATIC.

Key Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
Organization: 524,288 words x 8 bits.
Low voltage function: 3.0V±10%.
Data re.

More Datasheets from Toshiba

Part Number	Description
TC51V8512AF-15	SILICON GATE CMOS PSEUDO STATIC RAM
TC51V8512AFT-12	SILICON GATE CMOS PSEUDO STATIC RAM
TC51V8512AFT-15	SILICON GATE CMOS PSEUDO STATIC RAM
TC51V8512ATR-12	SILICON GATE CMOS PSEUDO STATIC RAM
TC51V8512ATR-15	SILICON GATE CMOS PSEUDO STATIC RAM
TC51V4260DFTS	DRAM
TC51V4260DFTS-60	DRAM
TC51V4260DFTS-70	DRAM
TC51V4265DFTS	DRAM
TC51V4265DFTS-60	DRAM