ST1000GXH35
Features
(1) High reliability due to hermetic sealing structure. (2) Double side cooling type.
3. Packaging and Internal Circuit
©2023-2024
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2024-02
2024-03-19 Rev.1.0
4. Absolute Maximum Ratings (Note) (Tc = 25
- , unless otherwise specified)
Characteristics
Symbol Note
Test Condition
Rating
Unit
Collector-emitter voltage
VCES
Gate-emitter voltage
VGES
±20
Collector current (DC)
Tf = 108
- 1000
Collector current (pulsed)
ICP (Note 1)
Diode forward current (DC)
Tf = 15
- 1000
Diode forward current (pulsed)
IFP (Note 1)
Non-repetitive peak forward surge current...
