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SSM3K48FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM3K48FU
Load Switching Applications
• 2.5-V drive • Low ON-resistance: RDS(ON) = 3.2 Ω (max) (@VGS = 4.0 V)
RDS(ON) = 5.4 Ω (max) (@VGS = 2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature
Storage temperature range
VDSS
30
V
VGSS
±20
V
ID
100
mA
IDP
400
PD (Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
USM
JEDEC
1. Gate 2. Source 3. Drain
―
Note: Using continuously under heavy loads (e.g. the application of
JEITA
SC-70
high temperature/current/voltage and the significant change in temperature, etc.
SSM3K48FU Datasheet
