S1836 - Silicon NPN Transistor

Datasheet Summary

Features

. Complementary to S1837. . 300V Minimum V(br)cEO . Low Saturation Voltage : VcE(sat )=°- 5V(Max. . Small Collector Output Capacitance. 5.1 MAX. Unit in mm.

Toshiba

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Datasheet Details

Part number	S1836
Manufacturer	Toshiba
File Size	124.29 KB
Description	Silicon NPN Transistor
Datasheet	S1836 Datasheet
Additional preview pages of the S1836 datasheet.

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Full PDF Text Transcription

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) S1836 FOR HIGH VOLTAGE AMPLIFIER APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS COLOR TV VIDEO OUTPUT APPLICATIONS FEATURES: . Complementary to S1837. . 300V Minimum V(br)cEO . Low Saturation Voltage : VcE(sat )=°- 5V(Max. . Small Collector Output Capacitance. 5.1 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vCBO vCEO vEBO PC T-i r stg RATING 300 300 UNIT i. EMITTER 2.

Published: Jun 10, 2024 |