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RN2909FE - Silicon PNP Epitaxial Type Transistor

This page provides the datasheet information for the RN2909FE, a member of the RN2907FE Silicon PNP Epitaxial Type Transistor family.

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN1907FE to RN1909FE 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2907FE RN2908FE RN2909FE R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2000-05 20.

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Datasheet preview – RN2909FE

Datasheet Details

Part number RN2909FE
Manufacturer Toshiba
File Size 523.51 KB
Description Silicon PNP Epitaxial Type Transistor
Datasheet download datasheet RN2909FE Datasheet
Additional preview pages of the RN2909FE datasheet.

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Full PDF Text Transcription

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RN2907FE to RN2909FE Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2907FE/08FE/09FE 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN1907FE to RN1909FE 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2907FE RN2908FE RN2909FE R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2000-05 2021-12-23 Rev.2.0 5.
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