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RN2131MFV, RN2132MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2131MFV, RN2132MFV
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
Unit: mm
Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN1131MFV, RN1132MFV
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
VESM
1.BASE 2.EMITTER 3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
1-1Q1S
Weight: 1.5 mg (typ.
RN2131MFV Datasheet
