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RN1966 - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1966, a member of the RN1961 Silicon NPN Epitaxial Type Transistors family.

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Datasheet Details

Part number RN1966
Manufacturer Toshiba
File Size 727.88 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1966 Datasheet
Additional preview pages of the RN1966 datasheet.

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Other Datasheets by Toshiba
  • RN1961 - Silicon NPN Epitaxial Type Transistors
  • RN1962 - Silicon NPN Epitaxial Type Transistors
  • RN1963 - Silicon NPN Epitaxial Type Transistors
  • RN1964 - Silicon NPN Epitaxial Type Transistors
  • RN1965 - Silicon NPN Epitaxial Type Transistors
  • RN1901 - Silicon NPN Epitaxial Type Transistors
  • RN1901FE - Silicon NPN Epitaxial Type Transistors
  • RN1902 - Silicon NPN Epitaxial Type Transistors

Full PDF Text Transcription

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RN1961 to RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1961, RN1962, RN1963 RN1964, RN1965, RN1966 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Including two devices in US6 (ultra super mini type 6 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN2961 to RN2966 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN1961 4.7 4.7 RN1962 10 10 RN1963 22 22 RN1964 47 47 RN1965 2.2 47 RN1966 4.
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