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RN1911FE - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1911FE, a member of the RN1910FE Silicon NPN Epitaxial Type Transistors family.

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN2910FE to RN2911FE 3. Equivalent Circuit 4. Packaging and Pin Assignment ES6 ©2021 1 Toshiba Electronic Devices & Storage Corporation 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 Start of commercial production.

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Datasheet preview – RN1911FE

Datasheet Details

Part number RN1911FE
Manufacturer Toshiba
File Size 375.31 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1911FE Datasheet
Additional preview pages of the RN1911FE datasheet.

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Full PDF Text Transcription

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RN1910FE,RN1911FE Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1910FE,RN1911FE 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN2910FE to RN2911FE 3. Equivalent Circuit 4. Packaging and Pin Assignment ES6 ©2021 1 Toshiba Electronic Devices & Storage Corporation 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 Start of commercial production 2000-05 2021-12-23 Rev.2.0 5.
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