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RN1909FE - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1909FE, a member of the RN1907FE Silicon NPN Epitaxial Type Transistors family.

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN2907FE to RN2909FE 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1907FE RN1908FE RN1909FE R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2000-05 20.

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Datasheet preview – RN1909FE

Datasheet Details

Part number RN1909FE
Manufacturer Toshiba
File Size 516.18 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1909FE Datasheet
Additional preview pages of the RN1909FE datasheet.

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Full PDF Text Transcription

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RN1907FE to RN1909FE Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1907FE/08FE/09FE 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Complementary to RN2907FE to RN2909FE 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1907FE RN1908FE RN1909FE R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2000-05 2021-08-18 Rev.1.0 5.
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