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RN1711JE - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1711JE, a member of the RN1710JE Silicon NPN Epitaxial Type Transistors family.

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Datasheet Details

Part number RN1711JE
Manufacturer Toshiba
File Size 257.13 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1711JE Datasheet
Additional preview pages of the RN1711JE datasheet.

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Other Datasheets by Toshiba
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Full PDF Text Transcription

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RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1710JE, RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Wide range of resistor values are available to use in various circuit designs. • Complementary to RN2710JE to RN2711JE Equivalent Circuit C R1 B E 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC ― JEITA ― TOSHIBA ― Weight: 0.003 g (typ.
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