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RN1711 - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1711, a member of the RN1710 Silicon NPN Epitaxial Type Transistors family.

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Datasheet Details

Part number RN1711
Manufacturer Toshiba
File Size 285.76 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1711 Datasheet
Additional preview pages of the RN1711 datasheet.

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Other Datasheets by Toshiba
  • RN1711JE - Silicon NPN Epitaxial Type Transistors
  • RN1710 - Silicon NPN Epitaxial Type Transistors
  • RN1710JE - Silicon NPN Epitaxial Type Transistors
  • RN1701 - Silicon NPN Epitaxial Type Transistors
  • RN1701JE - Silicon NPN Epitaxial Type Transistors
  • RN1702 - Silicon NPN Epitaxial Type Transistors
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Full PDF Text Transcription

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RN1710,RN1711 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1710, RN1711 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in USV (ultra super mini type with 5 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN2710 and RN2711 Unit: mm Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO Rating 50 50 5 USV Unit JEDEC ― V JEITA ― V TOSHIBA 2−2L1A V Weight: 6.2 mg (typ.
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