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RN1708JE - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1708JE, a member of the RN1707JE Silicon NPN Epitaxial Type Transistors family.

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Datasheet Details

Part number RN1708JE
Manufacturer Toshiba
File Size 329.67 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1708JE Datasheet
Additional preview pages of the RN1708JE datasheet.

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Other Datasheets by Toshiba
  • RN1708 - Silicon NPN Epitaxial Type Transistors
  • RN1701 - Silicon NPN Epitaxial Type Transistors
  • RN1701JE - Silicon NPN Epitaxial Type Transistors
  • RN1702 - Silicon NPN Epitaxial Type Transistors
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Full PDF Text Transcription

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RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1707JE, RN1708JE, RN1709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • A wide range of resistor values is available to use in various circuit designs. • Complementary to RN2707JE to RN2709JE Equivalent Circuit and Bias Resistor Values C R1 B E R2 Type No. RN1707JE RN1708JE RN1709JE R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.
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