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RN1309 - Silicon NPN Epitaxial Type Transistor

This page provides the datasheet information for the RN1309, a member of the RN1307 Silicon NPN Epitaxial Type Transistor family.

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2307 to RN2309 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1307 RN1308 RN1309 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices &.

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Datasheet preview – RN1309

Datasheet Details

Part number RN1309
Manufacturer Toshiba
File Size 1.06 MB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet RN1309 Datasheet
Additional preview pages of the RN1309 datasheet.

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Other Datasheets by Toshiba
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  • RN1305 - Silicon NPN Epitaxial Type Transistors
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Full PDF Text Transcription

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RN1307 to RN1309 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1307/08/09 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2307 to RN2309 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1307 RN1308 RN1309 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1988-04 2021-08-24 Rev.3.
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