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RN1132MFV - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1132MFV, a member of the RN1131MFV Silicon NPN Epitaxial Type Transistors family.

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Datasheet Details

Part number RN1132MFV
Manufacturer Toshiba
File Size 172.12 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1132MFV Datasheet
Additional preview pages of the RN1132MFV datasheet.

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RN1131MFV, RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1131MFV, RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.  A wide range of resistor values is available for use in various circuits.  Complementary to the RN2131MFV, RN2132MFV Equivalent Circuit 1.BASE VESM 2.EMITTER 3.COLLECTOR JEDEC JEITA TOSHIBA ― ― 1-1Q1S Weight: 1.5 mg (typ.
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