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RN1117MFV - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1117MFV, a member of the RN1114MFV Silicon NPN Epitaxial Type Transistors family.

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Datasheet Details

Part number RN1117MFV
Manufacturer Toshiba
File Size 780.68 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1117MFV Datasheet
Additional preview pages of the RN1117MFV datasheet.

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Full PDF Text Transcription

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RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process  Complementary to RN2114MFV to RN2118MFV Equivalent Circuit and Bias Resister Values Type No. RN1114MFV RN1115MFV RN1116MFV RN1117MFV RN1118MFV R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 Absolute Maximum Ratings (Ta = 25°C) VESM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.
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