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K880. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 2SK880 Audio Frequency Low Noise Amplifier Applications · High |Yfs|: |Yfs| = 15 mS (typ.) at VDS =...
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ise Amplifier Applications · High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ · High input impedance: IGSS = −1 nA (max) at VGS = −30 V · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 100 125 -55~125 Unit V mA mW °C °C Marking Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-2E1B Weight: 0.006 g (typ.
K880 Datasheet
