(1) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ. ) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.35 mA)
3. Packaging and Internal Circuit
TK7A60W
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipati.
Full PDF Text Transcription for K7A60W (Reference)
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MOSFETs Silicon N-Channel MOS (DTMOS) TK7A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.) by us...
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tures (1) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK7A60W 1: Gate 2: Drain 3: Source TO-220SIS 4.
K7A60W Datasheet
