Full PDF Text Transcription for K3911 (Reference)
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K3911. For precise diagrams, and layout, please refer to the original PDF.
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ...
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g Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 500 μA (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.
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