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K3497. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: ...
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497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 180 Gate−source voltage VGSS ±12 Drain current DC (Note ) Pulse (Note ) ID IDP 10 30 Drain power dissipation (Tc = 25°C) PD 130 Channel temperature Tch 150 Storage temperature range Tstg −55~150 Note: Ensure that the channel temperature does not exceed 150°C. V V A A W °C °C Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.96 50 Uni
K3497 Datasheet
