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K2398 - Field Effect Transistor

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Part number K2398
Manufacturer Toshiba
File Size 317.76 KB
Description Field Effect Transistor
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Full PDF Text Transcription for K2398 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2398. For precise diagrams, and layout, please refer to the original PDF.

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2398 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance...

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and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement−mode : Vth = 1.5~3.