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K1062. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications 2SK1062 Unit: mm...
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Analog Switching Applications Interface Applications 2SK1062 Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA • Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode • Complementary to 2SJ168 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg 60 ±20 200 800 200 150 −55~150 V V mA mW °C °C JEDEC ― JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.01
K1062 Datasheet
