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HN4D01JU - Silicon Epitaxial Planar Type Diode

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Part number HN4D01JU
Manufacturer Toshiba
File Size 217.52 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet HN4D01JU Datasheet
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TOSHIBA Diode Silicon Epitaxial Planar Type HN4D01JU HN4D01JU Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 85 V 80 V 300* mA 100* mA 2* A 200** mW Junction temperature Storage temperature Tj 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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