HN4C06J - Silicon NPN Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN4C06J
Manufacturer	Toshiba
File Size	338.37 KB
Description	Silicon NPN Epitaxial Type Transistor
Datasheet	HN4C06J Datasheet
Additional preview pages of the HN4C06J datasheet.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) z Low noise : NF = 1dB(typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage Collector current Base current Collector power dissipation VEBO IC IB PC* 5 V 100 mA 20 mA 300 mW 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.

Published: May 23, 2024 |