HN4B102J - Silicon PNP/NPN Transistor

Datasheet Summary

Features

design or.

Toshiba

📥 Download Datasheet

Datasheet Details

Part number	HN4B102J
Manufacturer	Toshiba
File Size	212.82 KB
Description	Silicon PNP/NPN Transistor
Datasheet	HN4B102J Datasheet
Additional preview pages of the HN4B102J datasheet.

📁 Similar Datasheet

HN4064CG - QUAD 10/100 Base Tx Transformer (Mingtek)
HN4065CG - QUAD 10/100 Base Tx Transformer (Mingtek)
HN4066CG - QUAD 10/100 Base Tx Transformer (Mingtek)
HN4068CG - QUAD 10/100 Base Tx Transformer (Mingtek)
HN4400 - NPN EXPITAXIAL SILICON TRANSISTOR (Semtech Corporation)
HN4401 - NPN EXPITAXIAL SILICON TRANSISTOR (Semtech Corporation)
HN4402 - PNP EXPITAXIAL SILICON TRANSISTOR (Semtech Corporation)
HN4403 - PNP EXPITAXIAL SILICON TRANSISTOR (Semtech Corporation)
HN4464S2G - QUAD 10/100 Base Tx Transformer (Mingtek)
HN4464SG - QUAD 10/100 Base Tx Transformer (Mingtek)

Other Datasheets by Toshiba

HN4B101J - Silicon NPN/PNP Epitaxial Type Transistor
HN4B01JE - Silicon NPN/PNP Epitaxial Type Transistor
HN4B06J - Silicon NPN/PNP Epitaxial Type Transistor
HN4A06J - Silicon PNP Epitaxial Type Transistor
HN4A08J - Silicon PNP Epitaxial Type Transistor
HN4A51J - Silicon PNP Epitaxial Type Transistor
HN4A56JU - Silicon PNP Epitaxial Type Transistor
HN4C05JU - Multi Chip Discrete Device

Full PDF Text Transcription

Click to expand full text

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications • Small footprint due to a small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) • Low collector-emitter saturation : PNP VCE (sat) =－0.20 V (max) : NPN VCE (sat) = 0.14 V (max) • High-speed switching : PNP tf = 40 ns (typ.) : NPN tf = 45 ns (typ.) 2.9±0.2 1.9±0.2 0.95 0.95 　　+0.2 2.8 -0.3 　　+0.2 1.6 -0.1 Unit: mm 0.4±0.1 15 2 4 3 　　　+0.1 0.16 -0.06 　　+0.2 1.1 -0.

Published: Feb 3, 2016 |