HN4B101J - Silicon NPN/PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN4B101J
Manufacturer	Toshiba
File Size	250.38 KB
Description	Silicon NPN/PNP Epitaxial Type Transistor
Datasheet	HN4B101J Datasheet
Additional preview pages of the HN4B101J datasheet.

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Full PDF Text Transcription

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HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications • Small footprint due to a small and thin package • High DC current gain : hFE = 200 to 500 (IC = −0.12 A) • Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max) : NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 45 ns (typ.) : NPN tf = 50 ns (typ.) 2.9±0.2 1.9±0.2 0.95 0.95 　　+0.2 2.8 -0.3 　　+0.2 1.6 -0.1 Unit: mm 0.4±0.1 1 5 2 4 3 　　　+0.1 0.16 -0.06 　　+0.2 1.1 -0.1 Absolute Maximum Ratings (Ta = 25°C) 0~0.

Published: May 23, 2024 |