HN4A06J - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN4A06J
Manufacturer	Toshiba
File Size	313.22 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN4A06J Datasheet
Additional preview pages of the HN4A06J datasheet.

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A06J HN4A06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current Base current Collector power dissipation Junction temperature IC −100 mA IB −20 mA PC* 300 mW Tj 150 °C 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.

Published: May 23, 2024 |