HN2E04F - MULTI CHIP DISCRETE DEVICE

Toshiba

Datasheet Details

Part number	HN2E04F
Manufacturer	Toshiba
File Size	572.15 KB
Description	MULTI CHIP DISCRETE DEVICE
Datasheet	HN2E04F Datasheet
Additional preview pages of the HN2E04F datasheet.

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Full PDF Text Transcription

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TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F HN2E04F Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage : VCEO = −120V High DC Current Gain : hFE = 200 to 700 Good hFE Linearity Q2 : hFE(IC =− 0.1mA)/ hFE(IC =− 2mA) = 0.95 Low Forward Voltage Drop : VF(3) = 0.98V (typ.) Fast Reverse Recovery Time : trr = 1.6ns (typ.) Low Total Capacitance : CT = 0.5pF (typ.

Published: May 20, 2024 |