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HN1D04FU - Silicon Epitaxial Planar Type Diode

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Part number HN1D04FU
Manufacturer Toshiba
File Size 231.42 KB
Description Silicon Epitaxial Planar Type Diode
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TOSHIBA Diode Silicon Epitaxial Planar Type HN1D04FU Ultra High Speed Switching Application z Low forward voltage : VF(3) = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) HN1D04FU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature VRM VR IFM IO IFSM P Tj Tstg 85 V 80 V 300* mA 100* mA 2* A 200** mW 150 °C −55 to 150 °C US6 1.ANODE1 2.CATHODE2 3.ANODE4 CATHODE3 4.ANODE3 5.CATHODE4 6.CATHODE1 ANODE2 Note: Using continuously under heavy loads (e.g.
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