HN1A07F - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN1A07F
Manufacturer	Toshiba
File Size	137.70 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN1A07F Datasheet
Additional preview pages of the HN1A07F datasheet.

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A07F HN1A07F Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = −6V, IC = −400mA Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage Collector current Base current Collector power dissipation VEBO IC IB PC* −5 V −500 mA −100 mA 300 mW 1.EMITTER1 (E1) 2.BASE1 (B1) 3.COLLECTOR2 (C2) 4.EMITTER2 (E2) 5.BASE2 (B2) 6.

Published: May 20, 2024 |