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HN1A02F - Silicon PNP Epitaxial Type Transistor

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Part number HN1A02F
Manufacturer Toshiba
File Size 139.12 KB
Description Silicon PNP Epitaxial Type Transistor
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F HN1A02F Audio Frequency Power Amplifier Applications Switching applications z High hFE : hFE(1) = 120 to 400 z Low VCE(sat.) : VCE (sat) = −0.2 V (max) (IC = −400 mA, IB = −8 mA) z Small Power Motor Driver Application. Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristic Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −15 V Emitter-base voltage VEBO −5 V Collector current Base current Collector power dissipation Junction temperature IC −800 mA IB −160 mA PC* 300 mW Tj 150 °C 1.EMITTER1 (E1) 2.BASE1 (B1) 3.COLLECTOR2 (C2) 4.EMITTER2 (E2) 5.BASE2 (B2) 6.
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