Datasheet4U Logo Datasheet4U.com

BU126 - Silicon NPN Transistor

Features

  • . High Breakdown Voltage : VcES = 750V . Low Saturation Voltage : V CE ( sat )=5V(Max. ) at Ic=4A, Ifi=lA.
  • High speed : tf=0.15ys (Typ. ) Unit in mm s025OMAX. Zfel.0 MAX. , +ao9 01.0.
  • a 03 TJT-l- 30.2±Q2.

📥 Download Datasheet

Datasheet Details

Part number BU126
Manufacturer Toshiba
File Size 57.28 KB
Description Silicon NPN Transistor
Datasheet download datasheet BU126 Datasheet

📁 Similar Datasheet

  • BU126 - NPN Transistor (INCHANGE)
  • BU126 - SILICON POWER TRANSISTOR (SavantIC)
  • BU120 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BU120 - Bipolar NPN Device (Seme LAB)
  • BU1206 - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU1206-E3 - Bridge Rectifiers (Vishay)
  • BU1206-M3 - Bridge Rectifiers (Vishay)
  • BU1208 - Enhanced PowerBridge Rectifiers (Vishay Siliconix)
  • BU1208-E3 - Bridge Rectifiers (Vishay)
  • BU1208-M3 - Bridge Rectifiers (Vishay)
Other Datasheets by Toshiba

    Full PDF Text Transcription

    Click to expand full text
    : SILICON NPN TRIPLE DIFFUSED MESA TYPE 33 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR INTENDED FOR USE IN THE SWITCHED MODE POWER SUPPLY OF TELEVISION RECEIVERS. FEATURES . High Breakdown Voltage : VcES = 750V . Low Saturation Voltage : V CE ( sat )=5V(Max.) at Ic=4A, Ifi=lA • High speed : tf=0.15ys (Typ.) Unit in mm s025OMAX. Zfel.0 MAX. , +ao9 01.0—a 03 TJT-l- 30.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage Collector Current DC Peak VCES VCEX (-V BE =1.5V VCEO IC ICM -ICM RATING 750 750 300 UNIT 1. BASE 2. EMITTER COLLECTOR ^CASE) TO — TOSHIBA TC— 3 , TB— 2— 21B1A Mounting Kit No. AC42C Weight : 17.0g DC IB Base Current Peak IBM _I B(AV) 100 (DC or averaged over any 20mS period) mA -IBM 1.
    Published: |