BAV99W
Switching Diodes Silicon Epitaxial Planar
1. Applications
- High-Speed Switching
2. Packaging and Internal Circuit
1: Anode 1 2: Cathode 2 3: Cathode 1/Anode 2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
100 V
Reverse voltage
Peak forward current
IFM (Note 1)
500 m A
Average rectified current
IO (Note 2)
Non-repetitive peak forward surge current
IFSM (Note 2), (Note 3)
Power dissipation
100 m W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the...
