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A1313. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applica...
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ier Applications Driver Stage Amplifier Applications Switching Applications 2SA1313 Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • High voltage: VCEO = −50 V (min) • Complementary to 2SC3325 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −50 V −50 V −5 V −500 mA −50 mA 200 mW 150 °C −55 to 150 °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A We
A1313 Datasheet
