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2SD1166 - NPN Transistor

Key Features

  • . High Voltage : VCE0 (SUS) >900V . Triple Diffused Design . Darlington Design Unit in mm 2-0&2±U2.

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Datasheet Details

Part number 2SD1166
Manufacturer Toshiba
File Size 116.35 KB
Description NPN Transistor
Datasheet download datasheet 2SD1166 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATION AC & DC MOTOR CONTROL APPLICATION INVERTER APPLICATION FEATURES . High Voltage : VCE0 (SUS) >900V . Triple Diffused Design . Darlington Design Unit in mm 2-0&2±U2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Thermal Resistance (Double Side Cooling) Junction Temperature Storage Temperature Mounting Force Required SYMBOL VCBO v CEO(SUS) Vebo ic IE IB RATING 1000 900 200 -200 12 R th(j-c) 0.04 125 stg -40-150 1000±100 UNIT C/W kg 1. BASE 2. EMITTER 3.