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2N4126 Datasheet Silicon PNP Transistor

Manufacturer: Toshiba

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2N4126 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N4126
Manufacturer	Toshiba
File Size	55.09 KB
Description	Silicon PNP Transistor
Download	2N4126 Download (PDF)

Overview

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N4126 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.

Key Features

. Low Leakage Current : IcBO=-50nA(Max. ) @ VcB=-20V lEBO=-50nA(Max. ) @ Veb=-3V . Low Saturation Voltage.
' vCE(sat)=-0-4V(Max. ) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ v C B=-5V . Complementary to 2N4124.

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