TPCP8306 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TPCP8306
Manufacturer	Toshiba Semiconductor
File Size	229.35 KB
Description	MOSFETs
Datasheet	TPCP8306 Datasheet
Additional preview pages of the TPCP8306 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1 PS-8 1 2010-08-03 Rev.1.0 TPCP8306 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source v.

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Published: Aug 27, 2014 |