TPCP8305 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TPCP8305
Manufacturer	Toshiba Semiconductor
File Size	226.56 KB
Description	MOSFETs
Datasheet	TPCP8305 Datasheet
Additional preview pages of the TPCP8305 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 PS-8 1 2011-03-14 Rev.2.0 TPCP8305 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-so.

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Published: Aug 27, 2014 |