TPCP8206 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TPCP8206
Manufacturer	Toshiba Semiconductor
File Size	234.95 KB
Description	MOSFETs
Datasheet	TPCP8206 Datasheet
Additional preview pages of the TPCP8206 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain PS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pu.

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Published: Aug 27, 2014 |