TPCP8109 - Silicon P-Channel MOSFET

Product Overview

Toshiba Semiconductor

Part number	TPCP8109
Manufacturer	Toshiba Semiconductor
File Size	256.32 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCP8109 Datasheet
Additional preview pages of the TPCP8109 datasheet.

(1) AEC-Q101 qualifed (2) Small, thin package (3) Small gate charge: QSW = 5.8 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 40.3 mΩ (typ. ) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCP8109 PS-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.3.0 TPCP8109 4. Absolute Maximum.

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Published: Aug 27, 2014 |