TPCP8106 - MOSFETs

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Toshiba Semiconductor

Part number	TPCP8106
Manufacturer	Toshiba Semiconductor
File Size	224.21 KB
Description	MOSFETs
Datasheet	TPCP8106 Datasheet
Additional preview pages of the TPCP8106 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 25 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain PS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curre.

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Published: Aug 27, 2014 |