TPCF8108 - MOSFETs

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Toshiba Semiconductor

Part number	TPCF8108
Manufacturer	Toshiba Semiconductor
File Size	218.82 KB
Description	MOSFETs
Datasheet	TPCF8108 Datasheet
Additional preview pages of the TPCF8108 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curr.

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Published: Aug 27, 2014 |