TPCF8004 - Silicon N-Channel MOSFET

Product Overview

Toshiba Semiconductor

Part number	TPCF8004
Manufacturer	Toshiba Semiconductor
File Size	228.86 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPCF8004 Datasheet
Additional preview pages of the TPCF8004 datasheet.

(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCF8004 1, 2, 3, 6, 7, 8: Drain 4: Gate 5: Source VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-sourc.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Aug 27, 2014 |