TPC8082 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TPC8082
Manufacturer	Toshiba Semiconductor
File Size	223.67 KB
Description	MOSFETs
Datasheet	TPC8082 Datasheet
Additional preview pages of the TPC8082 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (p.

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Published: Aug 31, 2014 |