TPC8017-H - Field Effect Transistor

Toshiba

Datasheet Details

Part number	TPC8017-H
Manufacturer	Toshiba
File Size	321.60 KB
Description	Field Effect Transistor
Datasheet	TPC8017-H Datasheet

Other Datasheets by Toshiba

Part Number	Description
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TPC8018-H	Silicon N-Channel MOS Type Field Effect Transistor
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TPC8003	N-Channel MOSFET
TPC8004	N-Channel MOSFET

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TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| =38 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.