TPC6130 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TPC6130
Manufacturer	Toshiba Semiconductor
File Size	219.99 KB
Description	MOSFETs
Datasheet	TPC6130 Datasheet
Additional preview pages of the TPC6130 datasheet.

(1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 86 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1, 2, 5, 6: Drain 3: Gate 4: Source VS-6 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pul.

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Published: Aug 27, 2014 |