The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK6A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK6A65D
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
650 ±30
6 24 45
281
6 4.
TK6A65D Datasheet
