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TK65G10N1 - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source D2PAK Start of commercial production 1 2013-08 2014-06-30 Rev.4.0 TK65G10N1 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cur.

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Datasheet Details

Part number TK65G10N1
Manufacturer Toshiba
File Size 240.86 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK65G10N1 Datasheet

Full PDF Text Transcription for TK65G10N1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TK65G10N1. For precise diagrams, and layout, please refer to the original PDF.

TK65G10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK65G10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON...

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ulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source D2PAK Start of commercial production 1 2013-08 2014-06-30 Rev.4.0 TK65G10N1 4.

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