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TK16H60C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK16H60C
Switching Regulator Applications
z Low drain−source ON resistance
: RDS (ON) = 0. 32 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 11 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 2.0 to 4.
TK16H60C Datasheet
