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TK15X60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK15X60U
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 15 30 125 81 11 12.
TK15X60U Datasheet
